Microsemi MG1045-11

GaAs GUNN DIODE

Üretici
Microsemi
Üretici Parça Numarası
Entegreci Parça Kodu

Veri Dosyaları

Ürün Açıklaması

Microsemi's GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.

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