Diodes Incorporated DMWSH120H28SM4Q
SICFET N-CH 1200V TO-247
N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole TO-247-4
- Üretici
- Diodes Incorporated
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tube-packed
Datasheet ve Belgeler
Teknik Özellikler
- Paketleme Şekli
- Tube-packed
- Paket Miktarı
- 30
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Rds On (Max) @ Id, Vgs
- 28.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id
- 3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs
- 156.3 nC @ 15 V
- Vgs (Max)
- +19V, -8V
- Power Dissipation (Max)
- 429W (Tc)
- -55°C ~ 175°C (TJ)
- Grade
- Automotive
- Qualification
- AEC-Q101
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-4
- Package / Case
- TO-247-4
