Micro Commercial Co SICW080N120Y4-BP

Teknik Özellikler

Paketleme Şekli

Bag-packed

Paket Miktarı

360

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

39A

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

85mOhm @ 20A, 18V

Vgs(th) (Max) @ Id

3.6V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

41 nC @ 18 V

Vgs (Max)

+22V, -8V

Input Capacitance (Ciss) (Max) @ Vds

890 pF @ 1000 V

Power Dissipation (Max)

223W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4

Package / Case

TO-247-4

Base Part Number

SICW080