ROHM Semiconductor SCT3080KRHRC15

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

450

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

104mOhm @ 10A, 18V

Vgs(th) (Max) @ Id

5.6V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

60 nC @ 18 V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

785 pF @ 800 V

Power Dissipation (Max)

165W

Operating Temperature

175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4

Base Part Number

SCT3080