Infineon Technologies DF17MR12W1M1HFB68BPSA1

Teknik Özellikler

Paketleme Şekli

Tray

Paket Miktarı

24

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

45A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

16.2mOhm @ 50A, 18V

Vgs(th) (Max) @ Id

5.15V @ 20mA

Gate Charge (Qg) (Max) @ Vgs

149 nC @ 18 V

Vgs (Max)

+20V, -7V

Input Capacitance (Ciss) (Max) @ Vds

4400 pF @ 800 V

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Base Part Number

DF17MR12