Infineon Technologies IMZA120R030M1HXKSA1

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

240

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

40.9mOhm @ 25.6A, 18V

Vgs(th) (Max) @ Id

5.2V @ 11mA

Gate Charge (Qg) (Max) @ Vgs

68 nC @ 18 V

Vgs (Max)

+20V, -7V

Input Capacitance (Ciss) (Max) @ Vds

2160 pF @ 800 V

Power Dissipation (Max)

273W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-4-U02

Package / Case

TO-247-4