Infineon Technologies IPF019N12NM6ATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

1000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120 V

Current - Continuous Drain (Id) @ 25°C

31A (Ta), 254A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

1.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.6V @ 275µA

Gate Charge (Qg) (Max) @ Vgs

141 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000 pF @ 60 V

Power Dissipation (Max)

3.8W (Ta), 395W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7-3

Package / Case

TO-263-7, D2PAK (6 Leads + Tab)

Base Part Number

IPDQ65