Infineon Technologies IPF042N10NF2SATMA1
MOSFET
N-Channel 100 V 21A (Ta), 139A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount PG-TO263-7
- Üretici
- Infineon Technologies
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Ürün Serisi
- StrongIRFET™ 2
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tape & Reel (TR)
Datasheet ve Belgeler
Diğer Kaynaklar
Teknik Özellikler
- Paketleme Şekli
- Tape & Reel (TR)
- Paket Miktarı
- 800
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta), 139A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 4.25mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id
- 3.8V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs
- 85 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 4000 pF @ 50 V
- Power Dissipation (Max)
- 3.8W (Ta), 167W (Tc)
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO263-7
- Package / Case
- TO-263-7, D2PAK (6 Leads + Tab)
