Nexperia USA Inc. GAN140-650EBEZ
650 V, 140 MOHM GALLIUM NITRIDE
N-Channel 650 V 17A (Tc) 113W (Tc) Surface Mount, Wettable Flank DFN8080-8
- Üretici
- Nexperia USA Inc.
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tape & Reel (TR)
Datasheet ve Belgeler
Teknik Özellikler
- Paketleme Şekli
- Tape & Reel (TR)
- Paket Miktarı
- 2500
- FET Type
- N-Channel
- Technology
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V
- Rds On (Max) @ Id, Vgs
- 140mOhm @ 5A, 6V
- Vgs(th) (Max) @ Id
- 2.5V @ 17.2mA
- Gate Charge (Qg) (Max) @ Vgs
- 3.5 nC @ 6 V
- Vgs (Max)
- +7V, -1.4V
- Input Capacitance (Ciss) (Max) @ Vds
- 125 pF @ 400 V
- Power Dissipation (Max)
- 113W (Tc)
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount, Wettable Flank
- Supplier Device Package
- DFN8080-8
- Package / Case
- 8-VDFN Exposed Pad
- Base Part Number
- GAN140
