Nexperia USA Inc. GAN190-650EBEZ

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

2500

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V

Rds On (Max) @ Id, Vgs

190mOhm @ 3.9A, 6V

Vgs(th) (Max) @ Id

2.5V @ 12.2mA

Gate Charge (Qg) (Max) @ Vgs

2.8 nC @ 6 V

Vgs (Max)

+7V, -1.4V

Input Capacitance (Ciss) (Max) @ Vds

96 pF @ 400 V

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

DFN8080-8

Package / Case

8-VDFN Exposed Pad

Base Part Number

GAN190