Nexperia USA Inc. PSMN1R2-55SLHX

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

2000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55 V

Current - Continuous Drain (Id) @ 25°C

330A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.03mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

395 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

25773 pF @ 27 V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK88 (SOT1235)

Package / Case

SOT-1235