Toshiba Semiconductor and Storage TK10E80W,S1X

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

50

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800 V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

4V @ 450µA

Gate Charge (Qg) (Max) @ Vgs

19 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150 pF @ 300 V

Power Dissipation (Max)

130W (Tc)

Operating Temperature

150°C

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3