Alpha & Omega Semiconductor Inc. AOK065V120X2
SILICON CARBIDE MOSFET, ENHANCEM
N-Channel 1200 V 40.3A (Tc) 187.5W (Tj) Through Hole TO-247
- Üretici
- Alpha & Omega Semiconductor Inc.
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tube-packed
Datasheet ve Belgeler
Diğer Kaynaklar
Teknik Özellikler
- Paketleme Şekli
- Tube-packed
- Paket Miktarı
- 240
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 40.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Rds On (Max) @ Id, Vgs
- 85mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 62.3 nC @ 15 V
- Vgs (Max)
- +18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds
- 1716 pF @ 800 V
- Power Dissipation (Max)
- 187.5W (Tj)
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247
- Package / Case
- TO-247-3
- Base Part Number
- AOK065






