Diodes Incorporated DMWS120H100SM4

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

30

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

37.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

100mOhm @ 20A, 15V

Vgs(th) (Max) @ Id

3.5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

52 nC @ 15 V

Vgs (Max)

+19V, -8V

Input Capacitance (Ciss) (Max) @ Vds

1516 pF @ 1000 V

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4

Package / Case

TO-247-4

Base Part Number

DMWS120