Infineon Technologies IPB043N10NF2SATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

800

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 135A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4.35mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3.8V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

85 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000 pF @ 50 V

Power Dissipation (Max)

3.8W (Ta), 167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB