Infineon Technologies IPD029N04NF2SATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

2000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.9mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

3.4V @ 53µA

Gate Charge (Qg) (Max) @ Vgs

68 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3200 pF @ 20 V

Power Dissipation (Max)

3W (Ta), 107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Part Number

IPD029