Infineon Technologies IPG20N06S4L26ATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

5000

Technology

MOSFET (Metal Oxide)

Configuration

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

26mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1430pF @ 25V

Power - Max

33W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-4

Base Part Number

IPG20N