Infineon Technologies IQDH35N03LM5CGATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

5000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

66A (Ta), 700A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.35mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 1.46mA

Gate Charge (Qg) (Max) @ Vgs

197 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

18000 pF @ 15 V

Power Dissipation (Max)

2.5W (Ta), 278W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TTFN-9-U02

Package / Case

9-PowerTDFN

Base Part Number

IQDH35