Infineon Technologies IQE065N10NM5CGSCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
N-Channel 100 V 13A (Ta), 85A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-WHTFN-9-1
- Üretici
- Infineon Technologies
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Ürün Serisi
- OptiMOS™ 5
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tape & Reel (TR)
Datasheet ve Belgeler
Diğer Kaynaklar
Teknik Özellikler
- Paketleme Şekli
- Tape & Reel (TR)
- Paket Miktarı
- 6000
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 13A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 3.8V @ 48µA
- Gate Charge (Qg) (Max) @ Vgs
- 43 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 3000 pF @ 50 V
- Power Dissipation (Max)
- 2.5W (Ta), 100W (Tc)
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-WHTFN-9-1
- Package / Case
- 9-PowerWDFN







