Renesas Electronics America Inc. IRF710

Teknik Özellikler

Vgs (Max)

±20V

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Power Dissipation (Max)

36W (Tc)

Input Capacitance (Ciss) (Max) @ Vds

135pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Rds On (Max) @ Id, Vgs

3.6Ohm @ 1.1A, 10V

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drain to Source Voltage (Vdss)

400V

Technology

MOSFET (Metal Oxide)

FET Type

N-Channel

Base Part Number

IRF710

Paketleme Şekli

Bulk