ROHM Semiconductor RX3P10BBHC16

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

1000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

135 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8600 pF @ 50 V

Power Dissipation (Max)

189W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Base Part Number

RX3P10