Toshiba Semiconductor and Storage SSM3J15CT,L3F

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

10000

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

12Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.7V @ 100µA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9.1 pF @ 3 V

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

CST3

Package / Case

SC-101, SOT-883