Toshiba Semiconductor and Storage SSM6J825R,LF

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

3000

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

45mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.2 nC @ 4.5 V

Vgs (Max)

+10V, -20V

Input Capacitance (Ciss) (Max) @ Vds

492 pF @ 10 V

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP-F

Package / Case

6-SMD, Flat Leads

Base Part Number

SSM6J825