Toshiba Semiconductor and Storage TK16G60W5,RVQ

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

1000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

15.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

230mOhm @ 7.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 790µA

Gate Charge (Qg) (Max) @ Vgs

43 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350 pF @ 300 V

Power Dissipation (Max)

130W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB