Microchip Technology TN0604N3-G

Teknik Özellikler

Paketleme Şekli

Bag-packed

Paket Miktarı

1000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

700mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

750mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

1.6V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

190 pF @ 20 V

Power Dissipation (Max)

740mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Base Part Number

TN0604