Texas Instruments TPS1101D

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

75

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

15 V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.25 nC @ 10 V

Vgs (Max)

+2V, -15V

Power Dissipation (Max)

791mW (Ta)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Base Part Number

TPS1101