Infineon Technologies IPD640N06LGBTMA1
MOSFET N-CH 60V 18A TO-252
N-Channel 60V 18A (Tc) 47W (Tc) Surface Mount PG-TO252-3
- Üretici
- Infineon Technologies
- Üretici Parça Numarası
- İşaret Kodu
- Entegreci Parça Kodu
- Ürün Serisi
- OptiMOS™
- Paketleme
- Cut Tape (CT)
Datasheet ve Belgeler
Teknik Özellikler
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 64mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 470pF @ 30V
- Power Dissipation (Max)
- 47W (Tc)
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- PG-TO252-3
- Paketleme Şekli
- Cut Tape (CT)
