Infineon Technologies AIMBG120R010M1XTMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

1000

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

205A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

Rds On (Max) @ Id, Vgs

11.3mOhm @ 93A, 20V

Vgs(th) (Max) @ Id

5.1V @ 30mA

Gate Charge (Qg) (Max) @ Vgs

178 nC @ 20 V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

5703 pF @ 800 V

Power Dissipation (Max)

882W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Base Part Number

AIMBG120