Infineon Technologies IMYH200R012M1HXKSA1

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

240

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

2000 V

Current - Continuous Drain (Id) @ 25°C

123A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

16.5mOhm @ 60A, 18V

Vgs(th) (Max) @ Id

5.5V @ 48mA

Gate Charge (Qg) (Max) @ Vgs

246 nC @ 18 V

Vgs (Max)

+20V, -7V

Power Dissipation (Max)

552W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-4-U04

Package / Case

TO-247-4

Base Part Number

IMYH200