Infineon Technologies IPD640N06LGBTMA1, MOSFET N-CH 60V 18A TO-252

N-Channel 60V 18A (Tc) 47W (Tc) Surface Mount PG-TO252-3

Ürün Bilgileri

Üretici

Infineon Technologies

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

64mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2V @ 16µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 30V

Power Dissipation (Max)

47W (Tc)

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Montaj Tipi

Yüzey Montaj

Kılıf

TO-252-3, DPak (2 Leads + Tab), SC-63

Üretici Parça Kılıfı

PG-TO252-3

Seri

OptiMOS™

Parça Üzerindeki Kod

640N06L