Infineon Technologies IPD95R450PFD7ATMA1
MOSFET N-CH 950V 13.3A TO252-3
N-Channel 950 V 13.3A (Tc) 104W (Tc) Surface Mount PG-TO252-3
- Üretici
- Infineon Technologies
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Ürün Serisi
- CoolMOS™
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tape & Reel (TR)
Datasheet ve Belgeler
Diğer Kaynaklar
Teknik Özellikler
- Paketleme Şekli
- Tape & Reel (TR)
- Paket Miktarı
- 2500
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 950 V
- Current - Continuous Drain (Id) @ 25°C
- 13.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 450mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 360µA
- Gate Charge (Qg) (Max) @ Vgs
- 43 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1230 pF @ 400 V
- Power Dissipation (Max)
- 104W (Tc)
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO252-3
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
