Infineon Technologies IQE022N06LM5CGATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

5000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 151A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.3V @ 48µA

Gate Charge (Qg) (Max) @ Vgs

53 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4420 pF @ 30 V

Power Dissipation (Max)

2.5W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TTFN-9-3

Package / Case

9-PowerTDFN

Base Part Number

IQE022