Infineon Technologies IQE050N08NM5CGSCATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

6000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.8V @ 49µA

Gate Charge (Qg) (Max) @ Vgs

44 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900 pF @ 40 V

Power Dissipation (Max)

2.5W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-WHTFN-9-1

Package / Case

9-PowerWDFN