Infineon Technologies ISZ56DP15LMATMA1

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

5000

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150 V

Current - Continuous Drain (Id) @ 25°C

1.35A (Ta), 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

560mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2V @ 724µA

Gate Charge (Qg) (Max) @ Vgs

40 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400 pF @ 75 V

Power Dissipation (Max)

2.5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8 FL

Package / Case

8-PowerTDFN

Base Part Number

ISZ56DP15