Toshiba Semiconductor and Storage TJ10S04M3L(T6L1,NQ

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

2000

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

44mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

19 nC @ 10 V

Vgs (Max)

+10V, -20V

Input Capacitance (Ciss) (Max) @ Vds

930 pF @ 10 V

Power Dissipation (Max)

27W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK+

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Part Number

TJ10S04