Toshiba Semiconductor and Storage TW015Z120C,S1F
G3 1200V SIC-MOSFET TO-247-4L 1
N-Channel 1200 V 100A (Tc) 431W (Tc) Through Hole TO-247-4L(X)
- Üretici
- Toshiba Semiconductor and Storage
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Durum
- Aktif
- RoHS
- Uyumlu
- Paketleme
- Tube-packed
Datasheet ve Belgeler
Teknik Özellikler
- Paketleme Şekli
- Tube-packed
- Paket Miktarı
- 30
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Rds On (Max) @ Id, Vgs
- 21mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id
- 5V @ 11.7mA
- Gate Charge (Qg) (Max) @ Vgs
- 158 nC @ 18 V
- Vgs (Max)
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds
- 6000 pF @ 800 V
- Power Dissipation (Max)
- 431W (Tc)
- 175°C
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-4L(X)
- Package / Case
- TO-247-4
