Toshiba Semiconductor and Storage XPQ1R004PB,LXHQ

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

1500

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

200A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

84 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6890 pF @ 10 V

Power Dissipation (Max)

230W (Tc)

Operating Temperature

175°C

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

L-TOGL™

Package / Case

8-PowerBSFN

Base Part Number

XPQ1R004