STMicroelectronics STB33N60M2

Teknik Özellikler

Paket Miktarı

1000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45.5 nC @ 10 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1781 pF @ 100 V

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Base Part Number

STB33