Toshiba Semiconductor and Storage 2SK1489 (Q), MOSFET N-CH 1000V 12A TO-3PL

N-Channel 1000V 12A (Tc) 298W (Tc) Through Hole TO-3PL

Ürün Bilgileri

Üretici

Toshiba Semiconductor and Storage

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

12A

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1 Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 25V

FET Feature

–

Power Dissipation (Max)

200W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PL

Supplier Device Package

TO-3P(L)