- Üretici
- Toshiba Semiconductor and Storage
- Üretici Ürün Kodu
- 2SK3878(F,T)
- Entegreci Kodu
- EE02229
Toshiba Semiconductor and Storage 2SK3878(F,T)
MOSFET N-CH 900V TO-3PN
Ürün Bilgileri
N-Channel 900V 9A (Ta) 150W (Tc) Through Hole TO-3P(N)
- Üretici
- Toshiba Semiconductor and Storage
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 900V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 1.3Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 10V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 2200pF @ 25V
- Power Dissipation (Max)
- 150W (Tc)
- 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Supplier Device Package
- TO-3P(N)
Veri Dosyaları
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