Infineon Technologies IPA95R310PFD7XKSA1

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

50

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950 V

Current - Continuous Drain (Id) @ 25°C

8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

310mOhm @ 10.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 520µA

Gate Charge (Qg) (Max) @ Vgs

61 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1765 pF @ 400 V

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 150°C

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-313

Package / Case

TO-220-3 Full Pack