Infineon Technologies IPP018N10N5XKSA1
TRENCH >=100V
N-Channel 100 V 205A (Tc) 3.8W (Ta), 375W (Tc) Through Hole PG-TO220-3
- Üretici
- Infineon Technologies
- Üretici Parça Numarası
- Entegreci Parça Kodu
- Ürün Serisi
- OptiMOS™ 5
- Durum
- Üretimi durdu
- RoHS
- Uyumlu
- Paketleme
- Tube-packed
Datasheet ve Belgeler
Diğer Kaynaklar
Teknik Özellikler
- Paketleme Şekli
- Tube-packed
- Paket Miktarı
- 50
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 205A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 1.83mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id
- 3.8V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs
- 210 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 16000 pF @ 50 V
- Power Dissipation (Max)
- 3.8W (Ta), 375W (Tc)
- -55°C ~ 175°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO220-3
- Package / Case
- TO-220-3
