VBsemi IRFUC20PBF-VB
MOSFET N-CH 650V 2A TO251AA
Ürün Bilgileri(ROHS Uyumlu)
N-Channel 650 V 2A (Tc) 45W (Tc) Through Hole TO-251AA
- Üretici
- VBsemi
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 11 nC @ 10 V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 417 pF @ 25 V
- Power Dissipation (Max)
- 45W (Tc)
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package
- IPAK (TO-251)
- Base Part Number
- IRFUC20
- Rohs
- Uyumlu
- Device Marking Code
- FUC20
Veri Dosyaları
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