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International Rectifier IRLD110

MOSFET N-CH 100V 1A 4-DIP

N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

IRLD110
Üretici
International Rectifier
Üretici Parça Numarası
Entegreci Parça Kodu

Veri Dosyaları

Teknik Özellikler

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1nC @ 5V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 25V
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Supplier Device Package
HD-1

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