Microchip Technology MSC360SMA120SA

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

50

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

450mOhm @ 5A, 20V

Vgs(th) (Max) @ Id

3.14V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21 nC @ 20 V

Vgs (Max)

+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds

255 pF @ 1000 V

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Base Part Number

MSC360