onsemi NTBG040N120M3S

SILICON CARBIDE (SIC) MOSFET - E

N-Channel 1200 V 57A (Tc) 263W (Tc) Surface Mount D2PAK-7

Üretici
onsemi
Üretici Parça Numarası
Entegreci Parça Kodu
Durum
Aktif
RoHS
Uyumlu
Paketleme
Tape & Reel (TR)

Datasheet ve Belgeler

Teknik Özellikler

Paketleme Şekli
Tape & Reel (TR)
Paket Miktarı
800
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
54mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 800 V
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Part Number
NTBG040

İlginizi Çekebilecek Ürünler