onsemi NVH4L070N120M3S

Teknik Özellikler

Paketleme Şekli

Tube-packed

Paket Miktarı

30

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

87mOhm @ 15A, 18V

Vgs(th) (Max) @ Id

4.4V @ 7mA

Gate Charge (Qg) (Max) @ Vgs

57 nC @ 18 V

Vgs (Max)

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds

1230 pF @ 800 V

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4