Micro Commercial Co SICW1000N170A-BP

Teknik Özellikler

Paketleme Şekli

Bag-packed

Paket Miktarı

360

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1700 V

Current - Continuous Drain (Id) @ 25°C

3A

Drive Voltage (Max Rds On, Min Rds On)

15V, 20V

Rds On (Max) @ Id, Vgs

1.32Ohm @ 1.5A, 20V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15.5 nC @ 20 V

Vgs (Max)

+25V, -5V

Input Capacitance (Ciss) (Max) @ Vds

124 pF @ 1000 V

Power Dissipation (Max)

69W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AB

Package / Case

TO-247-3

Base Part Number

SICW1000