Toshiba Semiconductor and Storage SSM6K819R,LF

Teknik Özellikler

Paketleme Şekli

Tape & Reel (TR)

Paket Miktarı

3000

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25.8mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

8.5 nC @ 4.5 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1110 pF @ 15 V

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

175°C

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP-F

Package / Case

6-SMD, Flat Leads

Base Part Number

SSM6K819