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Toshiba Semiconductor and Storage TK6A65D(STA4,Q,M)

MOSFET N-CH 650V 5A TO-220SIS

N-Channel 650V 6A (Ta) 45W (Tc) Through Hole TO-220SIS

TK6A65D(STA4,Q,M)
Üretici
Toshiba Semiconductor and Storage
Üretici Parça Numarası
Entegreci Parça Kodu
Ürün Serisi
π-MOSVII
İşaret Kodu
K6A65D
RoHS
Uyumlu

Veri Dosyaları

Teknik Özellikler

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.11Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1050pF @ 25V
Power Dissipation (Max)
45W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220SIS

İlgili Kodlar

  • TK6A65D

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